The operational amplifiers (Op-Amps) are widely used in electronic systems operating under conditions of exposure to ionizing radiation; hence the IC designer has a need to carry out circuit modeling considering radiation factors. The main problem of this method of the Op-Amps simulation is that in SPICE-like programs there are no adequate models of bipolar transistors (BJTs) considering the effect of different types of radiation. The existing BJT SPICE models only allow the consideration of gamma-quantum and neutrons effects and have several disadvantages. In this work, the Op-Amp simulations implemented at transistor level are presented. For circuit simulation of the Op-Amps with account for radiation effects a universal SPICE-RAD model has been proposed, which adequately describes the BJT characteristics before and after exposure to various types of radiation. Simulation results of main electrical characteristics of two types of the Op-Amps (analogues of AD829, uA741) before and after exposure to ionizing radiation in the dose range up to 2 Mrad and the dose-rate range 0.1–50 rad/s are presented. The difference between the experimental and simulated Op-Amp characteristics is no more than 20 %.
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Key words:
operational amplifiers, Op-Amps, bipolar transistors, BJTs, SPICE models, SPICE simulation, radiations, dose rate
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Published in:
CIRCUIT ENGINEERING AND DESIGN
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Bibliography link:
Petrosyants K. O., Kozhukhov M. V., Popov D. A., Kharitonov I. A., Korneev S. V., Dukanov P. A., Smirnov D. S., Vologdin E. N. Analysis of radiation exposure effects on the characteristics of an operational amplifier using the universal SPICE-RAD model of bipolar transistors. Proc. Univ. Electronics, 2024, vol. 29, no. 5, pp. 640–657. https://doi.org/10.24151/1561-5405-2024-29-5-640-657. – EDN: GIGWRQ.
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Financial source:
the work has been supported by the Russian Science Foundation (grant no. 23-22-00313).
Konstantin O. Petrosyants
National Research University Higher School of Economics, Russia, 123458, Moscow, Tallinnskayast., 34; Institute for Design Problems in Microelectronics of the Russian Academy of Sciences, Russia, 124365, Moscow, Zelenograd, Sovetskayast., 3
Maksim V. Kozhukhov
National Research University Higher School of Economics, Russia, 123458, Moscow, Tallinnskayast., 34
Dmitriy A. Popov
National Research University Higher School of Economics, Russia, 123458, Moscow, Tallinnskayast., 34
Igor A. Kharitonov
National Research University Higher School of Economics, Russia, 123458, Moscow, Tallinnskayast., 34
Sergey V. Korneev
Institute for Design Problems in Microelectronics of the Russian Academy of Sciences, Russia, 124365, Moscow, Zelenograd, Sovetskayast., 3
Pavel A. Dukanov
Institute for Design Problems in Microelectronics of the Russian Academy of Sciences, Russia, 124365, Moscow, Zelenograd, Sovetskayast., 3
Dmitriy S. Smirnov
Institute for Design Problems in Microelectronics of the Russian Academy of Sciences, Russia, 124365, Moscow, Zelenograd, Sovetskayast., 3
Erich N. Vologdin
Institute for Design Problems in Microelectronics of the Russian Academy of Sciences, Russia, 124365, Moscow, Zelenograd, Sovetskayast., 3
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